ENBIS-8 in Athens

21 – 25 September 2008 Abstract submission: 14 March – 11 August 2008

Efficient Simulation of Extremely Small Probabilities in SRAM Design

23 September 2008, 16:10 – 16:30

Abstract

Submitted by
Alessandro Di Bucchianico
Authors
A. Di Bucchianico T. Doorn J. ter Maten O. Wittich
Affiliation
Eindhoven University of Technology/ NXP Semiconductors Eindhoven
Abstract
Variability is an important aspect of SRAM memory cell design. Failure prob-abilities of Pfail≤10^-10 have to be estimated through statistical simulations using time consuming circuit simulators. Accurate statistical techniques such as Importance Sampling Monte Carlo simulations are essential to accurately esti-mate such extremely small failure probabilities. We show that a simple form of Importance Sampling is suffices for simulating Pfail≤10^-10 for important per-formance characteristics like the Static Noise Margin, Write Margin and Read Current. For the SNM, a new simple technique is proposed that allows extrapolating the SNM distribution based on a limited number of trials.

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